PROJECT TITLE :

Analytical Physical-Based Drain-Current Model of Amorphous InGaZnO TFTs Accounting for Both Non-Degenerate and Degenerate Conduction

ABSTRACT:

During this letter, we tend to propose a physical-primarily based analytical drain current model for amorphous indium–gallium–zinc oxide thin-film transistors (a-IGZO TFTs). As a key feature, the model accounts for each the non-degenerate and the degenerate conduction regimes, together with the contributions of trapped and free charges. These two conduction regimes yet because the trapped and free charges are essential to consistently describe a-IGZO TFTs. The model is compared with each precise numerical calculations and measurements. It's continuous, symmetric, easy, and accurate. The model allows to achieve physical insight on the material and device properties, and it is a valuable tool for fast method optimization and circuit design.