Metal-Semiconductor–Metal Varactors Based on InAlN/GaN Heterostructure With Cutoff Frequency of 308 GHz PROJECT TITLE :Metal-Semiconductor–Metal Varactors Based on InAlN/GaN Heterostructure With Cutoff Frequency of 308 GHzABSTRACT:Metal-semiconductor–metal (MSM) varactor diodes based mostly on InAlN/GaN high electron mobility transistor structures were fabricated and characterized. Among the MSM varactors with gate lengths starting from ninety to 270 nm and gate distances of 2 and $four~mu textm$ , the best performance was obtained from the MSM varactor with gate length of 90 nm and gate spacing of two $mu textm$ . The capacitance switching ratio ( $C_max /C_min )$ of 2.31 together with a high cutoff frequency ( $f_o)$ of 308 GHz was demonstrated. The calculated figures of merit (FOMs), which were defined to be $f_ocdot C_max /C_min $ for the comparison of devices performance, were 523 and 769 GHz for devices with gate spacing of 4 and 2 $mu textm$ , respectively. The FOMs weren't keen about gate length of the devices, but highly obsessed on gate spacing. Did you like this research project? To get this research project Guidelines, Training and Code... Click Here facebook twitter google+ linkedin stumble pinterest Multiple Opponent Optimization of Prisoner’s Dilemma Playing Agents Broadband, non-destructive characterisation of PEC-backed materials using a dual-ridged-waveguide probe
