PROJECT TITLE :
Metal-Semiconductor–Metal Varactors Based on InAlN/GaN Heterostructure With Cutoff Frequency of 308 GHz
Metal-semiconductor–metal (MSM) varactor diodes based mostly on InAlN/GaN high electron mobility transistor structures were fabricated and characterized. Among the MSM varactors with gate lengths starting from ninety to 270 nm and gate distances of 2 and $four~mu textm$ , the best performance was obtained from the MSM varactor with gate length of 90 nm and gate spacing of two $mu textm$ . The capacitance switching ratio ( $C_max /C_min )$ of 2.31 together with a high cutoff frequency ( $f_o)$ of 308 GHz was demonstrated. The calculated figures of merit (FOMs), which were defined to be $f_ocdot C_max /C_min $ for the comparison of devices performance, were 523 and 769 GHz for devices with gate spacing of 4 and 2 $mu textm$ , respectively. The FOMs weren't keen about gate length of the devices, but highly obsessed on gate spacing.
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