Modeling and Experiment Verification of Lateral Current Spreading Effect in Ridge Waveguide Electroabsorption Modulators


We have a tendency to investigate the lateral current spreading impact and its influences on the transmission characteristics of ridge waveguide electroabsorption modulators. An RF equivalent circuit based mostly on a transmission line model explicitly accounting for this result is proposed. The equivalent circuit parameters in our model extracted from S11 curve fitting are used to simulate the S21 response (electro-optical response (E/O) response), that matches well with the measured direct S21 little-signal modulation response. The physical significance of our model parameters can be well explained based on the secondary ion mass spectroscopy doping profiling and also the simulation of this spreading impact in our device structure.

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