TCAD Strain Calibration Versus Nanobeam Diffraction of Source/Drain Stressors for Ge MOSFETs


TCAD finite-part method simulations have been performed on Ge-channel n and pMOSFETs with embedded source/drain stressors or a strained Ge channel on a relaxed SiGe strain relaxed buffer (SRB), respectively, and compared with nanobeam diffraction strain measurements. Whereas there is overall a good agreement between the simulated and experimental strain profiles, some deviations might occur, thanks to the presence of extended defects within the strain relaxed Ge buffer layers. This highlights the importance of choice of a strain-free reference within the relaxed Ge or SiGe SRB.

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