PROJECT TITLE :

Comparative Studies of Long-Term Ambiance and Electrical Stress Stability of IGZO Thin-Film Transistors Annealed Under Hydrogen and Nitrogen Ambiance

ABSTRACT:

The stability of hydrogenated indium–gallium–zinc-oxide (IGZO) skinny-film transistors (TFTs) was investigated. Hydrogenation of the IGZO TFTs was administrated by high-pressure hydrogen annealing. The IGZO TFTs annealed underneath nitrogen (N2) ambiance were conjointly fabricated for the comparative studies. The devices were kept within the air ambiance, and their performance was periodically measured to analyze their long-term stability. The long-term stability of the hydrogenated TFTs was better than that of the N2-annealed TFTs. Electrical bias stress was applied to each the sorts of the IGZO TFTs to check the electrical robustness of the devices. Beneath positive gate-bias stress, the optimized hydrogenated IGZO TFTs exhibited better reliability than those annealed in N2 ambiance in terms of threshold voltage ( ) and saturation mobility ( ).