PROJECT TITLE :
An Accurate Physics-Based Compact Model for Dual-Gate Bilayer Graphene FETs
During this paper, an accurate compact model based mostly on physical mechanisms for twin-gate bilayer graphene FETs is presented. This model is developed based mostly on the two-D density of states of bilayer graphene and is implemented in Verilog-A. Furthermore, physical equations describing the behavior of the source and drain access regions beneath back-gate bias are proposed. The accuracy of the developed massive-signal compact model has been verified by comparison with measurement knowledge from the literature.
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