An Accurate Physics-Based Compact Model for Dual-Gate Bilayer Graphene FETs PROJECT TITLE :An Accurate Physics-Based Compact Model for Dual-Gate Bilayer Graphene FETsABSTRACT:During this paper, an accurate compact model based mostly on physical mechanisms for twin-gate bilayer graphene FETs is presented. This model is developed based mostly on the two-D density of states of bilayer graphene and is implemented in Verilog-A. Furthermore, physical equations describing the behavior of the source and drain access regions beneath back-gate bias are proposed. The accuracy of the developed massive-signal compact model has been verified by comparison with measurement knowledge from the literature. Did you like this research project? To get this research project Guidelines, Training and Code... Click Here facebook twitter google+ linkedin stumble pinterest Simple flux-based Lagrangian formulation to model nonlinearity of concentrated-winding switched reluctance motors On the Surface Fields Excited by a Hertzian Dipole Over a Layered Halfspace: From Radio to Optical Wavelengths