Laminated Mo/C Electrodes for 4H-SiC Schottky Barrier Diodes With Ideal Interface Characteristics PROJECT TITLE :Laminated Mo/C Electrodes for 4H-SiC Schottky Barrier Diodes With Ideal Interface CharacteristicsABSTRACT:The electrical characteristics of SiC Schottky barrier diodes with laminated Mo/C electrodes having a Mo and C atom composition ratio of 2:one are investigated. High thermal stability against annealing up to a temperature of 1050 °C has been found as a diode characteristic. The virtually identical values of Schottky barrier height for the electrons ( $varPhi _mathrm mathbf Bn)$ obtained in several measurements with the ideality factors of below 1.10 indicate the formation of a perfect Schottky contact with 4H-SiC substrates. Did you like this research project? To get this research project Guidelines, Training and Code... Click Here facebook twitter google+ linkedin stumble pinterest Assignment of Persistent Scatterers to Buildings Discrimination of Carrier Conduction Mechanisms of InP/InGaAsP/InAs/InP Laser Structure Through $J$ – $V$ – $T$ Measurements