UV Enhanced Field Emission Properties of Ga-Doped ZnO Nanosheets


High-density gallium (Ga)-doped ZnO nanosheets were fabricated successfully on a glass substrate by aqueous solution method. The diameter and length of the Ga-doped ZnO nanosheets were $sim 25$ nm and 2.sixteen $mu textm$ , respectively. Within the dark, the turn-ON field of Ga-doped ZnO nanosheets was 4.67 V/ $mu textm$ , and the sector enhancement factor ( $beta $ ) was 4037. Beneath UV illumination, the flip-ON field and field enhancement issue were a pair of.83 V/ $mu textm$ and 6616, respectively.

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