Low-Input Power-Level CMOS RF Energy-Harvesting Front End


RF energy-harvesting front ends consist of matching networks and RF rectifiers. The minimum detectable power (sensitivity) depends on the losses of both parts. In this paper, RF energy-harvesting sensitivity limits at steady state and style tradeoffs for matching networks and rectifiers are introduced. These limits and tradeoffs are examined for normal CMOS 0.18- m technology. 2 designs, one with off-chip matching network and the opposite with on-chip matching network, are presented, compared, and measured for an output voltage of one V. The sensitivity of the off-chip design is dBm whereas taking a hundred and eighty ninety m die area and off-chip prime quality inductor and capacitor, which takes an further seven.28 mm printed circuit board space. The fully integrated on-chip design contains a sensitivity of dBm while taking 820 450 m die area. The sensitivity of the former proved superior whereas the latter is additional enticing in terms of compactness, low value, and easier tunability.

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