Photosensing Properties of Pentacene OFETs Based on a Novel PMMA Copolymer Gate Dielectric PROJECT TITLE :Photosensing Properties of Pentacene OFETs Based on a Novel PMMA Copolymer Gate DielectricABSTRACT:In the present work, bottom-gate high-contact organic field impact transistors (OFETs) were fabricated by evaporating a pentacene semiconductor film on high of a replacement insulating poly(methyl methacrylate) (PMMA) copolymer containing methacrylate units. The PMMA copolymer was synthesized in order to mix the well-known insulating properties of PMMA with the chance to be efficiently photocured enabling photopatterning-primarily based organic circuitry integration processes. The properties of the pentacene layer deposited on ITO/PMMA copolymer stack were studied through morphological and structural analyses. Device photoresponses and photoexcitated transients were investigated and compared to reference devices primarily based on commonplace PMMA gate dielectric. Did you like this research project? To get this research project Guidelines, Training and Code... Click Here facebook twitter google+ linkedin stumble pinterest Image transmission using unequal error protected multi-fold turbo codes over a two-user power-line binary adder channel Robust global identification of linear parameter varying systems with generalised expectation–maximisation algorithm
