PROJECT TITLE :

Numerical Simulation and Experimental Analysis of Current Spreading Length in Nitride-Based Light-Emitting Diodes Prepared on 10- -Thick n-GaN Template

ABSTRACT:

Numerical and experimental demonstrations were performed during this letter to reinforce the current spreading length of nitride-primarily based light-emitting diodes (LEDs) with a 10-μm-thick n-GaN template on an AlN/high-side ratio patterned sapphire substrate template via hydride vapor part epitaxy. At an injection current of twenty mA, the output powers were 4.thirty four and half dozen.39 mW for a standard LED and an LED with a ten-μm-thick n-GaN template, respectively. The larger LED output power is attributed to the enhanced current spreading length, that improved the heat dissipation ability and also the improved crystal quality.