Numerical Simulation and Experimental Analysis of Current Spreading Length in Nitride-Based Light-Emitting Diodes Prepared on 10- -Thick n-GaN Template PROJECT TITLE :Numerical Simulation and Experimental Analysis of Current Spreading Length in Nitride-Based Light-Emitting Diodes Prepared on 10- -Thick n-GaN TemplateABSTRACT:Numerical and experimental demonstrations were performed during this letter to reinforce the current spreading length of nitride-primarily based light-emitting diodes (LEDs) with a 10-μm-thick n-GaN template on an AlN/high-side ratio patterned sapphire substrate template via hydride vapor part epitaxy. At an injection current of twenty mA, the output powers were 4.thirty four and half dozen.39 mW for a standard LED and an LED with a ten-μm-thick n-GaN template, respectively. The larger LED output power is attributed to the enhanced current spreading length, that improved the heat dissipation ability and also the improved crystal quality. Did you like this research project? To get this research project Guidelines, Training and Code... Click Here facebook twitter google+ linkedin stumble pinterest Transient Analysis of TSV Equivalent Circuit Considering Nonlinear MOS Capacitance Effects SE 2014: Curriculum Guidelines for Undergraduate Degree Programs in Software Engineering
