Material Gain Analysis of GeSn/SiGeSn Quantum Wells for Mid-Infrared Si-Based Light Sources Based on Many-Body Theory


Material gain of GeSn/SiGeSn quantum wells, that will be grown on Si substrate employing a buffer layer, is analyzed primarily based on microscopic many-body theory (MBT) for mid-infrared lightweight sources based on Si photonics. MBT will take into account a gain spectrum broadening associated with scattering phenomena, like Coulomb scattering, based on quantum field theory, and does not would like any artificial fitting parameters, like a relaxation time, employed in typical analysis. Not solely $Gamma $ - however also carrier distributions in L-points are considered for the gain analysis. Using MBT, the quantum well structures maximizing the fabric gain and also the differential gain at the brink are investigated in terms of the well thickness, the strain, and also the energy distinction of quantum states between $Gamma $ - and L-points.

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