Surface Acceptor-Like Trap Model for Gate Leakage Current Degradation in Lattice-Matched InAlN/GaN HEMTs PROJECT TITLE :Surface Acceptor-Like Trap Model for Gate Leakage Current Degradation in Lattice-Matched InAlN/GaN HEMTsABSTRACT:Typical leakage current degradation behaviors are observed in lattice-matched In0.17Al0.83N/GaN Schottky structure, suggesting that the inverse piezoelectric impact might not be the major mechanism causing gate degradation in the stress-free GaN HEMTs. The low-field current is dominated by Poole–Frenkel emission of electrons with the compensation impact, indicative of the presence of deep-level acceptor-like traps in the surface barrier layer. A replacement surface cceptor-like entice model is developed to address the degradation kinetics, emphasizing that the high-field Fowler–Nordheim tunneling method might cause the generation of the acceptor-like defects, that could in turn introduce a thinner surface barrier to boost the tunneling element, and the corresponding threshold voltage should verify the essential voltage of gate degradation. Did you like this research project? To get this research project Guidelines, Training and Code... Click Here facebook twitter google+ linkedin stumble pinterest Design Optimization, Prototyping, and Performance Evaluation of a Low-Speed Linear Induction Motor With Toroidal Winding
