PROJECT TITLE :

Graphene Amplifier MMIC on SiC Substrate

ABSTRACT:

Low-noise amplifier is one among the most engaging applications of graphene transistors in the RF area. In this letter, a graphene amplifier MMIC is fabricated on the quasi-free-standing bilayer epitaxial graphene grown on SiC (0001) substrate. In order to understand each the high gain and low return loss, Au matching lines are designed because the input and output impedance match networks. The fabricated graphene amplifier MMIC shows a tiny-signal power gain of 3.four dB at 14.3 GHz and a minimum noise figure of half dozen.2 dB. This letter is a important revolution for graphene electronics in low-noise amplifier and demonstrates graphene’s potential in RF applications for future high-speed electronics.