PROJECT TITLE :

Analytical Surface Potential and Drain Current Models of Dual-Metal-Gate Double-Gate Tunnel-FETs

ABSTRACT:

In this paper, a replacement 2-D analytical model for the surface potential of a twin-metal-gate double-gate tunnel field-impact transistor is presented. It takes under consideration the results of the drain and gate voltages, gate metal work perform, insulator thickness, silicon film thickness, and source and drain depletions. The surface potential thus obtained is employed to calculate the tunneling widths at both the source and drain junctions, that are subsequently used as the boundaries for the combination of the band-to-band generation rate so as to arrive at the tunneling current. In this paper, the band-to-band tunneling is considered to require place through both the source moreover because the drain depletion regions. Our model accounts for the variable drain doping through a fitting function, which is postulated based mostly on the speculation of generation current, and the results have been found to predict the correct ambipolar behavior of the tunneling field-result transistors. The results of our model, both for the surface potential and therefore the tunneling current, match terribly well with those obtained through the TCAD simulations.