Development of cap-free sputtered GeTe films for inline phase change switch based RF circuits PROJECT TITLE :Development of cap-free sputtered GeTe films for inline phase change switch based RF circuitsABSTRACT:Germanium telluride (GeTe) films have been recently demonstrated as the active element in low-loss RF switches where a 7.3 THz cut-off frequency (Fco) was achieved. In order to simultaneously realize the low ON-state transmission loss and large OFF-state isolation required for this application, significant optimization of the GeTe films was required. In particular, minimizing contact resistance (Rc) and sheet resistivity (Rsheet) without the use of a capping layer is a necessity. Varying the GeTe deposition conditions led to a wide range of structural, chemical, and electrical properties, which ultimately enabled the demonstration of a capless GeTe inline phase change switch (IPCS) structure. Conversely, improper deposition conditions led to extensive oxidation which would push Rc and Rsheet to unacceptable levels. In addition to its relevance for IPCS devices, this work has implications for the environmental stability of GeTe as a function of its physical morphology. Did you like this research project? To get this research project Guidelines, Training and Code... Click Here facebook twitter google+ linkedin stumble pinterest Tuning the oxidation states and crystallinity of copper oxide nanofibers by calcination Theory of graphene–insulator–graphene tunnel junctions
