PROJECT TITLE :

Computational Study of Effects of Surface Roughness and Impurity Scattering in Si Double-Gate Junctionless Transistors

ABSTRACT:

Electron transport in Si double-gate junctionless transistors (JLTs) is simulated on the premise of the multisubband Monte Carlo method, considering acoustic phonons, intervalley phonons, ionized impurities (IIs), and surface roughness (SR) scattering. It's demonstrated that JLTs will actually minimize the mobility degradation caused by SR scattering and improve the current drivability. On the other hand, II scattering is confirmed to degrade the present drivability compared with standard MOSFETs with an intrinsic channel. However, the performance degradation in JLTs thanks to II scattering is shown to be insignificant, due to the screening result of free carriers and the forward scattering properties of high-speed carriers. Furthermore, by extracting a backscattering coefficient, the screening effect and also the forward scattering properties are shown to a lot of mitigate II scattering as the gate voltage will increase.