Optical emission spectroscopic studies and comparisons of CH3F/CO2 and CH3F/O2 inductively coupled plasmas PROJECT TITLE :Optical emission spectroscopic studies and comparisons of CH3F/CO2 and CH3F/O2 inductively coupled plasmasABSTRACT:A CH3F/CO2 inductively coupled plasma (ICP), sustained in a compact plasma reactor, was investigated as a function of power (5–400 W) and feed gas composition, at a pressure of 10 mTorr, using optical emission spectroscopy and rare gas actinometry. Number densities of H, F, and O increased rapidly between 74% and 80% CO2, ascribed to the transition from polymer-covered to polymer-free reactor walls, similar to that found previously in CH3F/O2 ICPs at 48% O2. Below 40% O2 or CO2, relative emission intensity ratios were almost identical for most key species in CH3F/O2 and CH3F/CO2 ICPs except for higher OH/Xe (a qualitative measure of OH and H2O densities) over the full range of CH3F/O2 composition. The number density of H, F, and O increased with power in CH3F/CO2 (20%/80%) plasmas (polymer-free walls), reaching 4.0, 0.34, and 1.6 × 1013/cm3, respectively, at 300 W. The CO number density increased with power and was estimated, based on self-actinometry, to be 8.8 × 1013/cm3 at 300 W. The CO2 number density was independent of power below 40 W (where very little decomposition occurred), and then decreased rapidly with increasing power, reaching 2.8 × 1013/cm3 at 300 W, corresponding to 83% dissociation. Films deposited on p-Si, 10 cm from the open, downstream end of the plasma reactor, were analyzed by x-ray photoelectron spectroscopy. Between 10% and 40% CO2 or O2 addition to CH3F, film deposition rates fell and O content in the films increased. Faster deposition rates in CH3F/CO2 plasmas were ascribed mainly to a larger thermodynamic driving forc- to form solid carbon, compared with CH3F/O2 plasmas. Oxygen content in the films increased with increasing CO2 or O2 addition, but for the same deposition rate, no substantial differences were observed in the composition of the films. Did you like this research project? To get this research project Guidelines, Training and Code... Click Here facebook twitter google+ linkedin stumble pinterest Stress engineering using low oxygen background pressures during Volmer–Weber growth of polycrystalline nickel films Investigation of electrochemical etch differences in AlGaAs heterostructures using Cl2 ion beam assisted etching