PROJECT TITLE :

1/ Noise Characteristics of MoS2 Thin-Film Transistors: Comparison of Single and Multilayer Structures

ABSTRACT:

We have a tendency to report on the transport and low-frequency noise measurements of MoS2 skinny-film transistors (TFTs) with skinny (2-3 atomic layers) and thick (fifteen-18 atomic layers) channels. The back-gated transistors created with the relatively thick MoS2 channels have advantages of the upper electron mobility and lower noise level. The normalized noise spectral density of the low-frequency 1/f noise in thick MoS2 transistors is of the identical level as that in graphene. The MoS2 transistors with the atomically skinny channels have substantially higher noise levels. It was established that, unlike in graphene devices, the noise characteristics of MoS2 transistors with thick channels (fifteen-18 atomic planes) might be described by the McWhorter model. Our results indicate that the channel thickness optimization is crucial for practical applications of MoS2 TFTs.