PROJECT TITLE :

Low Interface Trap Densities and Enhanced Performance of AlGaN/GaN MOS High- Electron Mobility Transistors Using Thermal Oxidized Y2O3 Interlayer

ABSTRACT:

AlGaN/GaN metal–oxide–semiconductor high-electron mobility transistors (MOS-HEMTs) with Y2O3 interlayer have been investigated to boost the interface quality. With the HfO2/Y2O3 stack gate dielectrics, the devices show a saturated drain current density of up to mA/mm. Meanwhile, the pulsed – measurement indicates interface traps are as low as cm , and therefore the pulsed- measurement exhibits great resistance to current collapse. Furthermore, the devices also gift good reliability underneath negative bias stress. Therefore, the interface engineering based mostly on Y2O3 contains a potential to open up a brand new avenue to high-performance AlGaN/GaN MOS-HEMTs.