A SPICE-Compatible Model of MOS-Type Graphene Nano-Ribbon Field-Effect Transistors Enabling Gate- and Circuit-Level Delay and Power Analysis Under Process Variation PROJECT TITLE :A SPICE-Compatible Model of MOS-Type Graphene Nano-Ribbon Field-Effect Transistors Enabling Gate- and Circuit-Level Delay and Power Analysis Under Process VariationABSTRACT:This paper presents the first parameterized SPICE-compatible compact model of a graphene nano-ribbon field-result transistor (GNRFET) with doped reservoirs, additionally called MOS-sort GNRFET. This and charge models closely match numerical TCAD simulations. Still, method variation in transistor dimension, line edge roughness, and doping level in the reservoirs are accurately modeled. Our model provides a suggests that to research delay and power of graphene-primarily based circuits beneath method variation, and offers style and fabrication insights for graphene circuits in the long run. We have a tendency to show that line edge roughness severely degrades the advantages of GNRFET circuits; but, GNRFET remains a good candidate for low-power applications. Did you like this research project? To get this research project Guidelines, Training and Code... Click Here facebook twitter google+ linkedin stumble pinterest Remote health monitoring system for detecting cardiac disorders Switching the Light: From Chemical to Electrical [Historical]
