PROJECT TITLE :

Bias-Induced Healing of Vmin Failures in Advanced SRAM Arrays - 2017

ABSTRACT:

A completely unique bias-induced healing of address specific failing bits in VLSI SRAM useful arrays is demonstrated for the first time in advanced CMOS nodes. Aging effects thanks to bias temperature instability (BTI) ensuing in device shifts are a widely known reliability downside in advanced CMOS technologies. We propose and demonstrate a methodology of exploiting the BTI mechanism and the addressing capability of SRAM to recover bits that fail during stress. Recovery of failures using this methodology is demonstrated in each twenty- and 14-nm technology nodes in VLSI SRAM arrays. This method introduces the chance of self-healing SRAM arrays and overcomes many of the limitations of the traditional industry voltage-guard-band approach.