Dressed Linewidth Enhancement Factors in Small Semiconductor Lasers


We show that the linewidth of a semiconductor-based mostly small laser, when operated above the edge, would possibly in some way replicate the permittivity variation induced by carriers within the gain material. In reality, the linewidth may be significantly dressed by responses of modal amplitudes to emitting sources if the little cavity is dispersive, lossy, leaky, spectrally-sharp in gain, but not necessarily intricately-structured. This dressing result may reduce linewidth enhancements. Despite a massive material linewidth enhancement factor, the supply-amplitude response may still keep the enhancement result mild.

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