Double-Gate Graphene Nanoribbon Field-Effect Transistor for DNA and Gas Sensing Applications: Simulation Study and Sensitivity Analysis


In this paper, new sensors based mostly on a double-gate (DG) graphene nanoribbon field-result transistor (GNRFET), for prime-performance DNA and gas detection, are proposed through a simulation-based study. The proposed sensors are simulated by solving the Schrödinger equation using the mode area non-equilibrium Green’s perform formalism coupled self-consistently with a 2D Poisson equation beneath the ballistic limits. The dielectric and work perform modulation techniques are used for the electrical detection of DNA and gas molecules, respectively. The behaviors of both the sensors are investigated, and the impacts of variation in geometrical and electrical parameters on the sensitivity of sensors have also been studied. In comparison to different FET-primarily based sensors, the proposed sensors provide not only higher sensitivity but also better electrical and scaling performances. The obtained results make the proposed DG-GNRFET-primarily based sensors as promising candidates for ultra-sensitive, tiny-size, low-power and reliable CMOS-primarily based DNA, and gas sensors.

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