A 1 TB/s 1 pJ/b 6.4 QDR Inductive-Coupling Interface Between 65-nm CMOS Logic and Emulated 100-nm DRAM


1 TB/s one pJ/b six.4 $rm mm^2/rm TB/s$ inductive-coupling interface between 65-nm complementary metal–oxide–semiconductor (CMOS) logic and emulated one hundred-nm dynamic random access memory (DRAM) is developed. $rm BER<ten^-16$ operation is examined in 1024-bit parallel links. Compared to the latest wired 40-nm DRAM interface, the bandwidth is increased to thirty two$times$, and therefore the energy consumption and therefore the layout area are reduced to 1/eight and 1/22, respectively.

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PROJECT TITLE :Reviews [review of A science of operations: machines, logic, and the invention of programming (Priestley, M.; 2011) and Moving targets: Elliott-automation and the dawn of the computer age in Britain (Lavington,

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