ICP-CVD SiN Passivation for High-Power RF InAlGaN/GaN/SiC HEMT PROJECT TITLE :ICP-CVD SiN Passivation for High-Power RF InAlGaN/GaN/SiC HEMTABSTRACT:High-frequency Metal Insulator Semiconductor High-Electron-Mobility Transistors (MIS HEMTs) were fabricated on quaternary InAlGaN/AlN/GaN heterostructures, grown by MOCVD on a 3” SiC substrate. Specific studies were performed on SiN ICP-CVD passivation layers. Improved performances were obtained with these optimized devices at thirty GHz as evidenced by CW Load Pull characterization: an output power of half-dozen W/mm and an influence-added efficiency of forty two%. A smart extrinsic transconductance value over 450 mS/mm and a current density up to one.55 A/mm were conjointly measured on these transistors. Did you like this research project? To get this research project Guidelines, Training and Code... Click Here facebook twitter google+ linkedin stumble pinterest Convolutional Neural Network Based Automatic Object Detection on Aerial Images Editorial: First Quarter 2016 IEEE Communications Surveys and Tutorials
