ICP-CVD SiN Passivation for High-Power RF InAlGaN/GaN/SiC HEMT


High-frequency Metal Insulator Semiconductor High-Electron-Mobility Transistors (MIS HEMTs) were fabricated on quaternary InAlGaN/AlN/GaN heterostructures, grown by MOCVD on a 3” SiC substrate. Specific studies were performed on SiN ICP-CVD passivation layers. Improved performances were obtained with these optimized devices at thirty GHz as evidenced by CW Load Pull characterization: an output power of half-dozen W/mm and an influence-added efficiency of forty two%. A smart extrinsic transconductance value over 450 mS/mm and a current density up to one.55 A/mm were conjointly measured on these transistors.

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