PROJECT TITLE :

Robust Trench Buried-Guard-Ring-Based Termination for Charge Balanced Devices

ABSTRACT:

A serious limitation on the performance of high-voltage power semiconductor is the sting termination of the device. It's critical to maintain the breakdown voltage of the device while not compromising the reliability of the device by controlling the surface electrical field. A smart termination structure is important to the reliability of the ability semiconductor device. The proposed termination uses a unique trench MOS with buried guard ring structure to completely eliminate high surface electric field within the silicon region of the termination. The proposed termination theme was applied toward a 1350-V quick recovery diode and showed excellent results. It achieved ninety eight% of parallel plane breakdown voltage, with low leakage and no shifts when high-temperature reverse bias testing due to mobile ion contamination from packaging mould compound.