Extraction of Effective Mobility from nMOSFETs With Leaky Gate Dielectric Using Time Domain Reflectometry PROJECT TITLE :Extraction of Effective Mobility from nMOSFETs With Leaky Gate Dielectric Using Time Domain ReflectometryABSTRACT:The effective mobility ( $mu _rm eff$ ) of MOSFETs with ultrathin high- $k$ gate dielectric ( $rm EOT= 0.85$ nm) has been successfully extracted employing a time domain reflectometry method. A ground–signal–ground–ground probe configuration is used to analyze the gate-to-channel capacitance ( $C_rm gc$ ), gate-to-bulk capacitance ( $C_rm gb$ ), and total gate capacitance ( $C_g$ ) while not a complex RF check structure. Using this methodology, the effective mobility can be extracted even in the presence of a high gate leakage current ( $sim 30$ A/cm $^rm 2$ ) when the conventional split capacitance–voltage methodology using an impedance analyzer can not be applied. Did you like this research project? To get this research project Guidelines, Training and Code... Click Here facebook twitter google+ linkedin stumble pinterest VM-μCheckpoint: Design, Modeling, and Assessment of Lightweight In-Memory VM Checkpointing Filter Capacitor Minimization in a Flyback LED Driver Considering Input Current Harmonics and Light Flicker Characteristics
