Impact of Electron Irradiation on the ON-State Characteristics of a 4H–SiC JBS Diode


The ON-state characteristics of a one.7-kV 4H–SiC junction barrier Schottky diode were studied after four.5-MeV electron irradiation. Irradiation doses were chosen to cause a light-weight, robust, and full doping compensation of an epitaxial layer. The diodes were characterised using Deep Level Transient Spectroscopy, $C$ – $V$ (T), and $I$ – $V$ measurements while not postirradiation annealing. The calibration of model parameters of a device simulator, which reflects the unique defect structure caused by the electron irradiation, was verified up to 2000 kGy. The quantitative agreement between simulation and measurement requires: one) the Shockley–Read–Hall model with at least two deep levels quite the opposite to ion irradiation and a couple of) a new model for enhanced mobility degradation thanks to radiation defects. The diode performance at high electron fluences is shown to be restricted by the doping compensation at the epitaxial layer.

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