Impact of Electron Irradiation on the ON-State Characteristics of a 4H–SiC JBS Diode PROJECT TITLE :Impact of Electron Irradiation on the ON-State Characteristics of a 4H–SiC JBS DiodeABSTRACT:The ON-state characteristics of a one.7-kV 4H–SiC junction barrier Schottky diode were studied after four.5-MeV electron irradiation. Irradiation doses were chosen to cause a light-weight, robust, and full doping compensation of an epitaxial layer. The diodes were characterised using Deep Level Transient Spectroscopy, $C$ – $V$ (T), and $I$ – $V$ measurements while not postirradiation annealing. The calibration of model parameters of a device simulator, which reflects the unique defect structure caused by the electron irradiation, was verified up to 2000 kGy. The quantitative agreement between simulation and measurement requires: one) the Shockley–Read–Hall model with at least two deep levels quite the opposite to ion irradiation and a couple of) a new model for enhanced mobility degradation thanks to radiation defects. The diode performance at high electron fluences is shown to be restricted by the doping compensation at the epitaxial layer. Did you like this research project? To get this research project Guidelines, Training and Code... Click Here facebook twitter google+ linkedin stumble pinterest Wearable Antennas for Off-Body Radio Links at VHF and UHF Bands: Challenges, the state of the art, and future trends below 1 GHz. The Impact of Heterogeneous Computer Architectures on Computational Physics