Stuck Bits Study in DDR3 SDRAMs Using 45-MeV Proton Beam


This work shares the observations of stuck bits by proton beam in DDR3 parts in 3x-nm technologies. The DDR3 SDRAMs from four major DRAM makers were tested with a forty five-MeV proton beam at an operating frequency of 800 MHz. The beam exposure resulted in single bit upset (SBU) and multiple bit upsets (MBUs), as well as single and multiple stuck bits in a word because of micro-dose and displacement harm effects. The quantity of stuck bits reduced because the refresh interval length was decreased. Moreover, for the tested samples, the stuck bits were recovered utterly and might be run in the normal operation mode after annealing at a hundred and fifty°C. The occurrence of multiple stuck bits during a word was likely due to damages to the control logic and people stuck bits were recovered further once annealing at 150°C.

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