PROJECT TITLE :

A Defect-Centric Analysis of the Temperature Dependence of the Channel Hot Carrier Degradation in nMOSFETs

ABSTRACT:

The defect-centric distribution is used to review the temperature dependence of channel hot carrier (CHC) degradation in deeply scaled nMOSFETs. We have a tendency to analyze the temperature dependence in terms of the defect-centric parameters. The full number of traps is observed to increase with temperature, whereas the common threshold voltage shift created by a single charged defect, i.e., , is confirmed to be freelance of the temperature, as previously shown for bias temperature instability. By using the defect-centric analysis, we have a tendency to estimate the activation energy of the threshold voltage shift and that of the number of charged traps per device, that are directly linked to the CHC degradation.