Metal-Semiconductor Field-Effect Transistors With In–Ga–Zn–O Channel Grown by Nonvacuum-Processed Mist Chemical Vapor Deposition


In-Ga-Zn-O (IGZO) thin films (TFs) were grown by cost-effective nonvacuum answer-processed mist chemical vapor deposition. Prime quality AgOx Schottky contacts (SCs) were fabricated on these IGZO TFs with rectification ratios and barrier heights as high as 7.nine × 107 and 1 eV, respectively, combined with ideality factors as low as one.32. These SCs were subsequently used as gate contacts in the assembly of metal-semiconductor field-effect transistors (MESFETs) with glorious switching and stability characteristics. As an example, typical (W/L 785 μm/five μm) MESFETs were capable of providing ON-currents up to 245 μA, combined with a giant ON/OFF ratio of 3.eight × 107. A mobility of 3.2 cm2/(V.s) and a coffee subthreshold swing of 356 mV/decade were achieved in the W/L 524 μm/10 μm transistors. Beneath positive bias stress, these MESFETs were highly stable, demonstrating the feasibility of using a combination of mist chemical vapor deposition grown IGZO and AgOx SCs to produce stable, low power consumption, and low-cost switching devices.

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