Wideband dual-mode complementary metal–oxide–semiconductor receiver

PROJECT TITLE :

Wideband dual-mode complementary metal–oxide–semiconductor receiver

ABSTRACT:

A twin-mode complementary metal-oxide-semiconductor (CMOS) receiver operating from one to 2 GHz is presented. The proposed receiver employs a switchable low-noise amplifier (LNA) and two separated down-conversion methods to understand dual-mode operation. For receiving weak signals while not large blockers, the receiver works within the high-gain mode that adopts the common gate (CG)-common supply (CS) LNA and therefore the active-mixer-based mostly down-conversion path to realize high gain and low noise figure (NF). In the case of enormous in-band blockers, the receiver works in the high linearity mode, that uses the LNA as a low-noise transimpedance amplifier followed by a 25% duty-cycle current-driving passive mixer and a transimpedance amplifier primarily based on current buffer to get high in-band linearity. Implemented in a zero.eighteen μm CMOS technology, this receiver achieves four.nine dB NF and a voltage gain range of twenty nine.4-ninety two.vi dB in high-gain mode, whereas +0.9 dBm in-band input-referred third-order interception and a voltage gain range of 15.eight-twenty.one dB in high linearity mode.

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