A 0.33 V 683 $mu$ K-Band Transformer-Based Receiver Front-End in 65 nm CMOS Technology

PROJECT TITLE :

A 0.33 V 683 $mu$ K-Band Transformer-Based Receiver Front-End in 65 nm CMOS Technology

ABSTRACT:

An ultra-low-power transformer-based K-band receiver front-end is implemented in a very sixty five nm CMOS technology. For noise and input matching, a gate-to-source transformer-feedback technique is applied to the first-stage of the LNA. A transformer-based mostly gain-boosting feedback technique is adopted in the second-stage of the LNA for further gain enhancement without further dc power. Many transformers are used for inter-stage matching of the LNA and for single-to-differential LO/RF baluns of the ring mixer. By using forward-body-bias technique, the LNA operates at 0.thirty three V supply. For low-power receiver, a resistive ring mixer is adopted. The receiver demonstrates a twelve.five dB conversion gain (CG) and a 5.seven dB double-aspect band NF at IF frequency of 100 MHz with LO power of -ten dBm whereas consuming only 683 $murm W$. To the most effective of our data, the receiver demonstrates rock bottom dc power consumption among recently reported K-band CMOS receiver.

Did you like this research project?

To get this research project Guidelines, Training and Code... Click Here