Energy-Efficient Nonvolatile Flip-Flop With Subnanosecond Data Backup Time for Fine-Grain Power Gating

PROJECT TITLE :

Energy-Efficient Nonvolatile Flip-Flop With Subnanosecond Data Backup Time for Fine-Grain Power Gating

ABSTRACT:

A nonvolatile flip-flop (NVFF) is proposed, where magnetic tunnel junctions (MTJs) are incorporated into a CMOS flip-flop (FF) to enable nonvolatility. The voltage-controlled magnetic anisotropy (VCMA) result is utilized to keep a copy the latched data into MTJs before the ability offer is turned off. Switching an MTJ through the VCMA effect does not need a fanatical write circuit for knowledge backup, resulting in reduced space as compared with NVFFs exploiting the spin transfer torque (STT) switching mechanism. In a very VCMA-based NVFF, the MTJs are coherently switched, enabling ultra-energy economical information backup with subnanosecond backup time. Simulation results exhibit more than a 342 $times$ (33.7 $times$) improvement in data backup energy per bit, and more than thirty five.five $times$ (7.7 $times$) improvement in information backup delay per bit as compared with the most economical STT-primarily based NVFFs (spin Hall effect-based NVFF). The energy efficiency of the VCMA-based NVFF results in sufficiently short breakeven times, enabling effective fine-grain power gating.

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