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PROJECT TITLE :

All-Oxide Inverters Based on ZnO Channel JFETs With Amorphous ZnCo2O4 Gates

ABSTRACT:

We gift integrated inverter circuits based on junction FETs (JFETs) with ZnO channels and amorphous ZnCo2O4 gate contacts. The inverters reach high gain values up to 276 and uncertainty ranges all the way down to 0.3 V for an operating voltage of three V. The magnitude of the gain is traced back theoretically to the slope of the JFET saturation current. The utilization of a level shifter is demonstrated, so as to obtain full inverters, which will be integrated into logic circuits.


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