Hot-Phonon Effects on High-Field Transport in GaN and AlN


We have a tendency to have studied the results of hot phonons on the high-field transport in GaN and AlN. The dynamics of the nonequilibrium electron-longitudinal optical phonon system is studied through an ensemble Monte Carlo code. We tend to realize that underneath steady-state conditions, the new phonons cause the randomization of the electron momentum, and increase their mean energy leading to diffusive heating. Average electron energies of three and 2 times those within the equilibrium phonon cases are found for GaN and AlN at the applied fields of a hundred and 350 kV/cm, respectively. The electron velocity is reduced compared with the case with equilibrium phonons at the lattice temperature. Within the transient regime, peak velocities reached at overshoot are reduced when the nonequilibrium phonons are thought of.

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