PROJECT TITLE :
Modeling of Drain Current Mismatch in Organic Thin-Film Transistors
During this paper, we present a consistent model to analyze the drain current mismatch of organic skinny-film transistors. The model takes charge fluctuations and edge effects under consideration, to predict the fluctuations of drain currents. A Poisson distribution for the number of charge carriers is assumed to represent the random distribution of charge carriers within the channel. The edge effects because of geometric variations in fabrication processes are interpreted in terms of the fluctuations of channel length and width. The simulation results are corroborated by experimental results taken from over 80 organic transistors on a flexible plastic substrate.
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