PROJECT TITLE :

Strain Dependence of Critical Fields—Studied on Piezoelectric Substrates

ABSTRACT:

$hboxLa_kern-.5pt1kern-.5pt.kern-.5pt85kern-.5pthboxSr_kern-.5pt 0kern-.5pt.kern-.5pt15kern-.5pthboxCuO_kern-.5pt4$, $hboxBaFe_kern-.5pt1kern-.5pt.kern-.5pt8kern-.5pthboxCo_kern-.5pt 0kern-.5pt.kern-.5pt2kern-.5pthboxAs_kern-.5pt2$ and $hboxFeSe_kern-.5pt0kern-.5pt.kern-.5pt5kern-.5pthboxTe_kern-.5pt0.5$ thin films have been prepared on piezoelectric (001) $hboxPb(hboxMg_1/3hboxNb_2/3)_0.72hboxTi_0.28hboxO_3$ substrates. By the employment of the inverse piezoelectric result, biaxial strain was induced into the films by applying an electric field to the sample. The strain sensitivity of the higher essential field and of the irreversibility line made up our minds by the analysis of the resistive transition. A biaxial compression in the order of zero.02% leads to a shift of those fields. A consistent description of the sphere dependence is possible taking under consideration a strain dependent transition temperature. No influence of the strain state on the anisotropy of the higher crucial field was found in initial approximation.