PROJECT TITLE :

Common-Base/Common-Gate Millimeter-Wave Power Detectors

ABSTRACT:

The principle of 2 common base/gate millimeter-wave power detectors is analyzed and validated by experimental results. The detectors are designed for automatic level management and designed-in-take a look at millimeter-wave applications. Closed-form expressions are derived for the transfer characteristic also for the noise behavior of each detector. The circuits are fabricated in a very BiCMOS 55 nm ($ f_t/f_max = $ 320 GHz/370 GHz) method from STMicroelectronics. Every detector occupies an space of 80$,times, $80 $mu hboxm^2 $ and exhibits a relatively high input impedance at sixty GHz. Measurements show a detection dynamic range larger than 38 dB and a flat response over the fifty–sixty six GHz bandwidth, for both detectors. Common-base detector shows a wider linear detection range than that of the common-gate one. Theoretical computation and pc simulation show that, for square-law detection, the minimum detectable input power (for $hboxSNR= hbox10~dB$) is around $ - hbox41~dBm $ for the common-gate detector against $ - hbox50~dBm $ for the common-base one. In their nominal bias conditions, the detectors' power consumption, underneath one.2 V provide voltage, is 90 $mu hboxW $ for low input power and it will increase to concerning 800 $ mu hboxW $ for 8.5 dBm input power. These performances are beyond the present state-of-the-art of millimeter-wave detectors.