PROJECT TITLE :

Double-Gated, Spindt-Type Field Emitter With Improved Electron Beam Extraction

ABSTRACT:

We tend to have developed a highly sensitive, compact image sensor that contains a field emitter array (FEA) and a high-gain avalanche-speeding amorphous photoconductor target, with the ultimate aim of developing an ultrahighly sensitive, compact, high-definition television camera. Double-gated FEs have an advantage of getting a compact electron beam focusing system; however, image intensities reproduced by the sensor were nonuniform because of low electron beam current. Furthermore, the simulated electron beam current disagreed with the measured current. The electron beam current characteristics of 2 sorts of double-gated, Spindt-kind FEs (both with improved electron beam current extraction) are discussed for attainable use among the sensor: convex-structured and volcano-structured. A highly correct simulation model of the image sensor using a double-gated, Spindt-sort FE has been examined; the simulated electron beam currents extracted from the double-gated, Spindt-kind FE are in agreement with the measured electron beam currents when the initial electron velocity is assumed, therefore suggesting that the simulated anode current–anode voltage characteristic conforms to the measured one. For example, the electron beam currents extracted from the convex-structured and volcano-structured FEs when the focusing electrode is placed 0.a pair of below the gate electrode opening at a focusing electrode voltage of 15 V are, respectively, 1.8 and 1.nine times larger than that extracted from the previously used FEs when the focusing electrode is stacked 1.five higher than the gate electrode. The results show potential for reducing the degradation of the uniformity of the reproduced image’s intensity, and show that the highly accurate simulation model of the sensor is valid to design the double-gated FEAs for the sensor.