Method for Fabricating Amorphous Indium-Zinc-Oxide Thin-Film Transistors With Copper Source and Drain Electrodes PROJECT TITLE :Method for Fabricating Amorphous Indium-Zinc-Oxide Thin-Film Transistors With Copper Source and Drain ElectrodesABSTRACT:We tend to revealed a unique technique to fabricate amorphous indium-zinc-oxide (a-IZO) skinny-film transistors (TFTs) with inverted staggered back-channel-etch structure and copper (Cu) source/drain (S/D) electrodes. In particular, a grey-tone mask was used to outline the S/D electrodes and active layer. The a-IZO layer acted not only as the active layer however additionally because the adhesive layer of Cu electrodes due to the great adhesion between Cu and a-IZO films. The presented TFTs exhibited a high saturated mobility of twelve.a pair of cm $^2$ /Vs, a threshold voltage of −0.4 V, and an occasional subthreshold swing of zero.22 V/decade. The great electrical performance and reliability were attributed to the great contact property between Cu electrodes and a-IZO layer and very little Cu atoms diffusing into the channel layer. Did you like this research project? To get this research project Guidelines, Training and Code... Click Here facebook twitter google+ linkedin stumble pinterest Steganography in Modern Smartphones and Mitigation Techniques Direct-Conversion CMOS X-Ray Imager With Pixels
