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PROJECT TITLE:

Accuracy Improvement of MOSFET Dosimeters in Case of Variation in Thermal Parameters

ABSTRACT:

Extraction of radiation dose information from MOSFET (RADFET) primarily based dosimetry systems usually relies on biasing the MOSFET during readout at zero temperature coefficient drain current ( mbi IZTC), measured before irradiation. This current will vary thanks to accumulated radiation doses and thermal fluctuations, which degrades dosimetric accuracy. This work presents a method to scale back thermal drift connected to this mbi IZTC shift. It's based on biasing with 2 carefully chosen currents throughout readout in keeping with a thermal model suitable for MOSFETs. An experiment together with irradiation and thermal cycles has been allotted to check the proposed methodology, using five varieties of RADFETs with 3 completely different gate-oxide thicknesses. If we tend to compare the thermal drift of the output voltage measured using our proposed methodology with that measured using the same old constant mbi IZTC methodology, the linear thermal coefficient shows reductions of 33% to 80% for mbiIZTC shifts between -fifteenpercent and + 65%.


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