Investigation of a Vacuum Encapsulated Si-to-Si Contact Microswitch Operated From −60 °C to 400 °C


We report on characterization of Si-to-Si contact microswitches fabricated in an ultraclean encapsulation method. This 3-terminal microswitch depends on a curved beam (source) that actuates toward the contact terminal (drain) by charging the management terminal (gate). The operation range of this switch from −sixty °C to three hundred °C is investigated, which approximately yields a resistance drift of $- two hundred~Omega $ /K. Our experiments embody tests of the high-temperature lifetime throughout continuous ON–OFF cycles. By reducing Joule heating at the contact, preliminary results demonstrate at least $ten^mathrm mathbf 6$ cycles longer lifetime at 400 °C. Subsequently, the failure mode is investigated and reported. The study of ultraclean Si-to-Si contact-primarily based microswitches provides an important guideline to the field of mechanical and electrical failure mechanisms for harsh atmosphere applications. [2014–0373]

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