PROJECT TITLE :

Computationally Efficient Simulation of High-Frequency Transients in Power Electronic Circuits

ABSTRACT:

A computationally economical simulation framework is about forth in that the semiconductor devices are represented by the physical phenomena relevant to the accurate prediction of high-frequency circuit-level transients and energy losses. Key components of this framework include an encapsulated diode model and a technique of coupling device models with those of external circuit parts given a user-specified SPICE-like netlist. The framework is applied to one-part full-bridge diode rectifier circuit with a discussion on time-step necessities and overall computational performance. Comparisons between simulated and measured waveforms are provided revealing excellent agreement.