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  4. High-Efficiency, Multijunction nc-Si:H-Based Solar Cells at High Deposition Rate
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Category: Photovoltaics Projects
By MTech Projects
MTech Projects
06.Apr
Hits: 9

High-Efficiency, Multijunction nc-Si:H-Based Solar Cells at High Deposition Rate

PROJECT TITLE :

High-Efficiency, Multijunction nc-Si:H-Based Solar Cells at High Deposition Rate

ABSTRACT:

Hydrogenated nanocrystalline silicon (nc-Si:H) is a promising candidate to replace the hydrogenated amorphous silicon–germanium alloy (a-SiGe:H) in multijunction thin-film silicon solar cells due to its superior long-wavelength response and stability against light-induced degradation. Due to its indirect bandgap, the absorbing nc-Si:H layer needs to be much thicker than its amorphous counterpart. For nc-Si:H-based solar cells to be commercially viable, the challenge is to deposit the nc-Si:H layer at a high rate with good quality. In this paper, we report on the development of our proprietary high-frequency glow discharge deposition technology to fabricate high-efficiency, large-area, a-Si:H/nc-Si:H/nc-Si:H triple-junction solar cells at a high deposition rate >1 nm/s. The National Renewable Energy Laboratory (NREL) has confirmed stable efficiency of 12.41% on a 1.05-cm$^2$ solar cell. We have attained initial efficiency of 12.33% on an encapsulated cell of aperture area ∼400 cm$^2$; the corresponding stable efficiency is projected to be 11.7–11.9%.

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  • Contactless Qualitative Series Resistance Imaging on Solar Cells
  • Experimental Results From Performance Improvement and Radiation Hardening of Inverted Metamorphic Multijunction Solar Cells
  • Superposition and Reciprocity in the Electroluminescence and Photoluminescence of Solar Cells
  • Synergistic Effects of Rear-Surface Passivation and the Metal Wrap Through Concept
  • A Contactless Method for Determining the Carrier Mobility Sum in Silicon Wafers
  • The Relation Between the Bandgap and the Anisotropic Nature of Hydrogenated Amorphous Silicon
  • Detailed Investigation of Surface Passivation Methods for Lifetime Measurements on P-Type Silicon Wafers
  • Gallium Arsenide Solar Cell Absorption Enhancement Using Whispering Gallery Modes of Dielectric Nanospheres
  • In Situ Current Determination of a-Si/μc-Si Tandem Solar Cells via Transmission Measurements During Silicon PECVD
  • Measurement of the Open-Circuit Voltage of Individual Subcells in a Dual-Junction Solar Cell
Previous article: The Relation Between the Bandgap and the Anisotropic Nature of Hydrogenated Amorphous Silicon The Relation Between the Bandgap and the Anisotropic Nature of Hydrogenated Amorphous Silicon Next article: 12.0% Efficiency on Large-Area, Encapsulated, Multijunction nc-Si:H-Based Solar Cells 12.0% Efficiency on Large-Area, Encapsulated, Multijunction nc-Si:H-Based Solar Cells
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