Evaluation of Gallium Nitride Transistors in High Frequency Resonant and Soft-Switching DC–DC Converters


The emergence of gallium nitride (GaN)-based mostly power devices offers the potential to achieve higher efficiencies and higher switching frequencies than possible with mature silicon (Si) power MOSFETs. During this paper, we have a tendency to can evaluate the ability of gallium nitride transistors to enhance potency and output power density in high frequency resonant and soft-switching applications. To experimentally verify the benefits of replacing Si MOSFETs with enhancement mode GaN transistors (eGaNFETs) during a high frequency resonant converter, forty eight-twelve V unregulated isolated bus converter prototypes operating at a switching frequency of one.2 MHz and an output power of up to 400 W are compared using Si and GaN power devices.

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