ABSTRACT:

Due to the aggressive scaling of metal-oxide- semiconductor fi eld-effect transistors (MOSFETs) and silicon germanium SiGe heterojunction bipolar transistors (HBTs), silicon-based circuits operating above 100 GHz are becoming a reality. However, at present, most, if not all semiconductor foundries extract their transistor and passive device models from measurements conducted below 110 GHz and often below 65 GHz. In order to reduce the number of design iterations, accurate S-parameter characterization techniques above 100 GHz are required for active and passive devices such that compact models may be developed and verifi ed on representative circuits.